Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.04 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
9.2 nC @ 4.5 V
Latime
4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.5mm
Detalii produs
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
Standard
10
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.04 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
9.2 nC @ 4.5 V
Latime
4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.5mm
Detalii produs


