Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
6.7 A
Maximum Drain Source Voltage
20 V
Tip pachet
ChipFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Temperatura maxima de lucru
+150 °C
Latime
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V dc
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 4,60
€ 0,46 Buc. (Intr-un pachet de 10) (fara TVA)
€ 5,57
€ 0,557 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 4,60
€ 0,46 Buc. (Intr-un pachet de 10) (fara TVA)
€ 5,57
€ 0,557 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 10 - 40 | € 0,46 | € 4,60 |
| 50 - 190 | € 0,44 | € 4,40 |
| 200 - 490 | € 0,30 | € 3,00 |
| 500+ | € 0,28 | € 2,80 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
6.7 A
Maximum Drain Source Voltage
20 V
Tip pachet
ChipFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Temperatura maxima de lucru
+150 °C
Latime
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V dc
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


