Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Tip pachet
ChipFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
2.6 nC @ 4.5 V
Latime
1.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.1mm
Detalii produs
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
25
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Tip pachet
ChipFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
2.6 nC @ 4.5 V
Latime
1.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.1mm
Detalii produs


