Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-523 (SC-89)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Transistor Material
Si
Latime
0.95mm
Number of Elements per Chip
1
Lungime
1.7mm
Typical Gate Charge @ Vgs
2.1 nC @ 5 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.8mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 10,00
€ 0,20 Buc. (Intr-un pachet de 50) (fara TVA)
€ 12,10
€ 0,242 Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
€ 10,00
€ 0,20 Buc. (Intr-un pachet de 50) (fara TVA)
€ 12,10
€ 0,242 Buc. (Intr-un pachet de 50) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 50 - 450 | € 0,20 | € 10,00 |
| 500 - 950 | € 0,17 | € 8,50 |
| 1000+ | € 0,15 | € 7,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-523 (SC-89)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Transistor Material
Si
Latime
0.95mm
Number of Elements per Chip
1
Lungime
1.7mm
Typical Gate Charge @ Vgs
2.1 nC @ 5 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.8mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


