Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
28.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
4.7 nC @ 5 V
Temperatura maxima de lucru
+175 °C
Inaltime
2.38mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Buc. (Intr-un pachet de 25) (fara TVA)
Standard
25
P.O.A.
Buc. (Intr-un pachet de 25) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
28.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
4.7 nC @ 5 V
Temperatura maxima de lucru
+175 °C
Inaltime
2.38mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


