Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Tip pachet
IPAK (TO-251)
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Temperatura minima de lucru
-55 °C
Inaltime
6.35mm
Detalii produs
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
Standard
10
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Tip pachet
IPAK (TO-251)
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Temperatura minima de lucru
-55 °C
Inaltime
6.35mm
Detalii produs


