Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Typical Gate Charge @ Vgs
16 nC @ 5 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Temperatura maxima de lucru
+175 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.38mm
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 31,00
€ 1,55 Buc. (Livrat pe rola) (fara TVA)
€ 37,51
€ 1,876 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
€ 31,00
€ 1,55 Buc. (Livrat pe rola) (fara TVA)
€ 37,51
€ 1,876 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
20
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 20 - 38 | € 1,55 | € 3,10 |
| 40 - 98 | € 1,43 | € 2,86 |
| 100 - 198 | € 1,37 | € 2,74 |
| 200+ | € 1,31 | € 2,62 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Typical Gate Charge @ Vgs
16 nC @ 5 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Temperatura maxima de lucru
+175 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.38mm
Detalii produs


