Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
15.5 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 5 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Temperatura maxima de lucru
+175 °C
Inaltime
2.38mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 2,02
€ 1,01 Buc. (Intr-un pachet de 2) (fara TVA)
€ 2,44
€ 1,222 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 2,02
€ 1,01 Buc. (Intr-un pachet de 2) (fara TVA)
€ 2,44
€ 1,222 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 2 - 18 | € 1,01 | € 2,02 |
| 20 - 198 | € 0,86 | € 1,72 |
| 200 - 998 | € 0,74 | € 1,48 |
| 1000+ | € 0,64 | € 1,28 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
15.5 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 5 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Temperatura maxima de lucru
+175 °C
Inaltime
2.38mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


