Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
30 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-24 V, +24 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
18.9 nC @ 10 V dc
Temperatura maxima de lucru
+150 °C
Inaltime
2.38mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 80,00
€ 0,80 Buc. (Livrat pe rola) (fara TVA)
€ 96,80
€ 0,968 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 80,00
€ 0,80 Buc. (Livrat pe rola) (fara TVA)
€ 96,80
€ 0,968 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
100
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 100 - 240 | € 0,80 | € 8,00 |
| 250 - 990 | € 0,69 | € 6,90 |
| 1000+ | € 0,60 | € 6,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
30 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-24 V, +24 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
18.9 nC @ 10 V dc
Temperatura maxima de lucru
+150 °C
Inaltime
2.38mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


