Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
18.5 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
10.29mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Latime
9.65mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
4.83mm
Detalii produs
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
10
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
18.5 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
10.29mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Latime
9.65mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
4.83mm
Detalii produs


