Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SC-75
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
9.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Latime
1.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
0.8mm
Inaltime
0.8mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 10,00
€ 0,10 Buc. (Livrat pe rola) (fara TVA)
€ 12,10
€ 0,121 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 10,00
€ 0,10 Buc. (Livrat pe rola) (fara TVA)
€ 12,10
€ 0,121 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
100
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 100 - 190 | € 0,10 | € 1,00 |
| 200 - 740 | € 0,06 | € 0,60 |
| 750 - 1490 | € 0,05 | € 0,50 |
| 1500+ | € 0,05 | € 0,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SC-75
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
9.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Latime
1.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
0.8mm
Inaltime
0.8mm
Temperatura minima de lucru
-55 °C
Detalii produs


