Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
22 nC @ 10 V
Latime
3.56mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.5mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.6mm
Temperatura minima de lucru
-65 °C
Detalii produs
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 4,60
€ 0,92 Buc. (Intr-un pachet de 5) (fara TVA)
€ 5,47
€ 1,095 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 4,60
€ 0,92 Buc. (Intr-un pachet de 5) (fara TVA)
€ 5,47
€ 1,095 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
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Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 0,92 | € 4,60 |
50 - 95 | € 0,79 | € 3,95 |
100 - 495 | € 0,68 | € 3,40 |
500 - 995 | € 0,59 | € 2,95 |
1000+ | € 0,53 | € 2,65 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
22 nC @ 10 V
Latime
3.56mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.5mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.6mm
Temperatura minima de lucru
-65 °C
Detalii produs
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.