Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
5pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Frecventa minima de auto-rezonanta
-55 °C
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Latime
1.4mm
Inaltime
1.01mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 2,60
€ 0,26 Buc. (Intr-un pachet de 10) (fara TVA)
€ 3,09
€ 0,309 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 2,60
€ 0,26 Buc. (Intr-un pachet de 10) (fara TVA)
€ 3,09
€ 0,309 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 0,26 | € 2,60 |
100 - 240 | € 0,22 | € 2,20 |
250 - 490 | € 0,19 | € 1,90 |
500 - 990 | € 0,16 | € 1,60 |
1000+ | € 0,15 | € 1,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
5pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Frecventa minima de auto-rezonanta
-55 °C
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Latime
1.4mm
Inaltime
1.01mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.