Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 40mA
Maximum Drain Source Voltage
20 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 1.04mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.04mm
Latime
1.3mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 14,00
€ 0,28 Buc. (Intr-un pachet de 50) (fara TVA)
€ 16,66
€ 0,333 Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
€ 14,00
€ 0,28 Buc. (Intr-un pachet de 50) (fara TVA)
€ 16,66
€ 0,333 Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
50 - 450 | € 0,28 | € 14,00 |
500 - 950 | € 0,24 | € 12,00 |
1000+ | € 0,21 | € 10,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 40mA
Maximum Drain Source Voltage
20 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 1.04mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.04mm
Latime
1.3mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.