Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Dimensiuni
6.73 x 2.38 x 6.35mm
Maximum Power Dissipation
20 W
Temperatura minima de lucru
-65 °C
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Inaltime
6.35mm
Latime
2.38mm
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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Each (Supplied in a Tube) (fara TVA)
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Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
15
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Dimensiuni
6.73 x 2.38 x 6.35mm
Maximum Power Dissipation
20 W
Temperatura minima de lucru
-65 °C
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Inaltime
6.35mm
Latime
2.38mm
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.