Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
33 nC @ 10 V
Latime
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.67mm
Temperatura maxima de lucru
+175 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
4.83mm
Detalii produs
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 107,00
€ 2,14 Buc. (Livrat pe rola) (fara TVA)
€ 129,47
€ 2,589 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
€ 107,00
€ 2,14 Buc. (Livrat pe rola) (fara TVA)
€ 129,47
€ 2,589 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 50 - 95 | € 2,14 | € 10,70 |
| 100 - 495 | € 1,84 | € 9,20 |
| 500+ | € 1,60 | € 8,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
33 nC @ 10 V
Latime
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.67mm
Temperatura maxima de lucru
+175 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
4.83mm
Detalii produs
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.


