Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
460 mA
Maximum Drain Source Voltage
25 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Number of Elements per Chip
1
Latime
1.3mm
Lungime
2.92mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.5 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
0.93mm
Detalii produs
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 270,00
€ 0,09 Buc. (Pe o rola de 3000) (fara TVA)
€ 321,30
€ 0,107 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 270,00
€ 0,09 Buc. (Pe o rola de 3000) (fara TVA)
€ 321,30
€ 0,107 Buc. (Pe o rola de 3000) (cu TVA)
3000
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Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
3000 - 3000 | € 0,09 | € 270,00 |
6000+ | € 0,08 | € 240,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
460 mA
Maximum Drain Source Voltage
25 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Number of Elements per Chip
1
Latime
1.3mm
Lungime
2.92mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.5 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
0.93mm
Detalii produs
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.