Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
40 V
Serie
PowerTrench
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
6.3 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.9mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.9mm
Typical Gate Charge @ Vgs
27 nC @ 4.5 V, 61 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.575mm
Temperatura minima de lucru
-55 °C
Detalii produs
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 54,00
€ 1,08 Buc. (Livrat pe rola) (fara TVA)
€ 65,34
€ 1,307 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
€ 54,00
€ 1,08 Buc. (Livrat pe rola) (fara TVA)
€ 65,34
€ 1,307 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
50
Informatii despre stoc temporar indisponibile
Cantitate | Pret unitar | Per Rola |
---|---|---|
50 - 95 | € 1,08 | € 5,40 |
100 - 495 | € 0,93 | € 4,65 |
500 - 995 | € 0,81 | € 4,05 |
1000+ | € 0,73 | € 3,65 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
40 V
Serie
PowerTrench
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
6.3 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.9mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.9mm
Typical Gate Charge @ Vgs
27 nC @ 4.5 V, 61 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.575mm
Temperatura minima de lucru
-55 °C
Detalii produs
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.