Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
29 nC @ 10 V
Latime
4mm
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Detalii produs
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 29,50
€ 0,59 Buc. (Livrat pe rola) (fara TVA)
€ 35,10
€ 0,702 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
€ 29,50
€ 0,59 Buc. (Livrat pe rola) (fara TVA)
€ 35,10
€ 0,702 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
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Cantitate | Pret unitar | Per Rola |
---|---|---|
50 - 95 | € 0,59 | € 2,95 |
100 - 495 | € 0,51 | € 2,55 |
500 - 995 | € 0,44 | € 2,20 |
1000+ | € 0,40 | € 2,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
29 nC @ 10 V
Latime
4mm
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Detalii produs
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.