Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
150 V
Serie
PowerTrench
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
22 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.9mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.36mm
Typical Gate Charge @ Vgs
14.3 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
16.07mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 11,60
€ 1,16 Buc. (Intr-un pachet de 10) (fara TVA)
€ 14,04
€ 1,404 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 11,60
€ 1,16 Buc. (Intr-un pachet de 10) (fara TVA)
€ 14,04
€ 1,404 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
150 V
Serie
PowerTrench
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
22 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.9mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.36mm
Typical Gate Charge @ Vgs
14.3 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
16.07mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.


