Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
12 A, 16 A
Maximum Drain Source Voltage
30 V
Serie
PowerTrench, SyncFET
Tip pachet
Power 33
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.5 mΩ, 12.4 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.9 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, -12 V, +12 V, +20 V
Temperatura maxima de lucru
+150 °C
Latime
3mm
Transistor Material
Si
Lungime
3mm
Typical Gate Charge @ Vgs
13 nC @ 10 V, 14 nC @ 5 V, 26 nC @ 10 V, 6.7 nC @ 5 V
Number of Elements per Chip
2
Inaltime
0.75mm
Temperatura minima de lucru
-55 °C
Detalii produs
PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 8,70
€ 1,74 Buc. (Intr-un pachet de 5) (fara TVA)
€ 10,35
€ 2,071 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 8,70
€ 1,74 Buc. (Intr-un pachet de 5) (fara TVA)
€ 10,35
€ 2,071 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
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Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,74 | € 8,70 |
50 - 95 | € 1,48 | € 7,40 |
100 - 495 | € 1,28 | € 6,40 |
500 - 995 | € 1,11 | € 5,55 |
1000+ | € 1,00 | € 5,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
12 A, 16 A
Maximum Drain Source Voltage
30 V
Serie
PowerTrench, SyncFET
Tip pachet
Power 33
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.5 mΩ, 12.4 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.9 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, -12 V, +12 V, +20 V
Temperatura maxima de lucru
+150 °C
Latime
3mm
Transistor Material
Si
Lungime
3mm
Typical Gate Charge @ Vgs
13 nC @ 10 V, 14 nC @ 5 V, 26 nC @ 10 V, 6.7 nC @ 5 V
Number of Elements per Chip
2
Inaltime
0.75mm
Temperatura minima de lucru
-55 °C
Detalii produs
PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.