Dual N/P-Channel-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 (SC-70) onsemi FDG6332C-F085
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N, P
Maximum Continuous Drain Current
600 mA, 700 mA
Maximum Drain Source Voltage
20 V
Serie
PowerTrench
Tip pachet
SOT-363 (SC-70)
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
300 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.25mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Tara de origine
United States
Detalii produs
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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P.O.A.
3000
P.O.A.
3000
Idei. creează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
- Descărcați și utilizați software-ul nostru DesignSpark pentru modelele dumneavoastră PCB și mecanice 3D
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Documente tehnice
Specificatii
Marca
onsemiChannel Type
N, P
Maximum Continuous Drain Current
600 mA, 700 mA
Maximum Drain Source Voltage
20 V
Serie
PowerTrench
Tip pachet
SOT-363 (SC-70)
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
300 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.25mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Tara de origine
United States
Detalii produs
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Idei. creează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
- Descărcați și utilizați software-ul nostru DesignSpark pentru modelele dumneavoastră PCB și mecanice 3D
- Vizualizați și contribuiți cu conținutul site-ului web și forumuri
- Descărcați modele 3D, scheme și amprente de la peste un milion de produse