Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
6.3 A
Maximum Drain Source Voltage
30 V
Serie
PowerTrench
Tip pachet
SSOT-6
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
36 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Typical Gate Charge @ Vgs
5 nC @ 5 V, 9 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Detalii produs
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 4,00
€ 0,40 Buc. (Intr-un pachet de 10) (fara TVA)
€ 4,76
€ 0,476 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 4,00
€ 0,40 Buc. (Intr-un pachet de 10) (fara TVA)
€ 4,76
€ 0,476 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 0,40 | € 4,00 |
100 - 240 | € 0,34 | € 3,40 |
250 - 490 | € 0,29 | € 2,90 |
500 - 990 | € 0,26 | € 2,60 |
1000+ | € 0,23 | € 2,30 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
6.3 A
Maximum Drain Source Voltage
30 V
Serie
PowerTrench
Tip pachet
SSOT-6
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
36 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Typical Gate Charge @ Vgs
5 nC @ 5 V, 9 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Detalii produs
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.