onsemi SuperFET II N-Channel MOSFET, 4.5 A, 600 V, 3-Pin IPAK FCU900N60Z
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
600 V
Serie
SuperFET II
Tip pachet
IPAK (TO-251)
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Latime
2.5mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.8mm
Typical Gate Charge @ Vgs
13.1 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
6.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 8,25
€ 1,65 Each (Supplied in a Tube) (fara TVA)
€ 9,82
€ 1,964 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
€ 8,25
€ 1,65 Each (Supplied in a Tube) (fara TVA)
€ 9,82
€ 1,964 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
- Descărcați și utilizați software-ul nostru DesignSpark pentru modelele dumneavoastră PCB și mecanice 3D
- Vizualizați și contribuiți cu conținutul site-ului web și forumuri
- Descărcați modele 3D, scheme și amprente de la peste un milion de produse
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
600 V
Serie
SuperFET II
Tip pachet
IPAK (TO-251)
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Latime
2.5mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.8mm
Typical Gate Charge @ Vgs
13.1 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
6.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
- Descărcați și utilizați software-ul nostru DesignSpark pentru modelele dumneavoastră PCB și mecanice 3D
- Vizualizați și contribuiți cu conținutul site-ului web și forumuri
- Descărcați modele 3D, scheme și amprente de la peste un milion de produse