Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-23
Serie
PowerTrench
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.92mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
1.8 nC @ 10 V
Inaltime
0.93mm
Temperatura minima de lucru
-55 °C
Detalii produs
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 21,00
€ 0,21 Buc. (Livrat pe rola) (fara TVA)
€ 24,99
€ 0,25 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 21,00
€ 0,21 Buc. (Livrat pe rola) (fara TVA)
€ 24,99
€ 0,25 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
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Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
100 - 240 | € 0,21 | € 2,10 |
250 - 490 | € 0,18 | € 1,80 |
500 - 990 | € 0,16 | € 1,60 |
1000+ | € 0,14 | € 1,40 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-23
Serie
PowerTrench
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.92mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
1.8 nC @ 10 V
Inaltime
0.93mm
Temperatura minima de lucru
-55 °C
Detalii produs
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.