Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
340 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-323
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.9mm
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 25,00
€ 0,05 Buc. (Livrat pe rola) (fara TVA)
€ 30,25
€ 0,06 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
500
€ 25,00
€ 0,05 Buc. (Livrat pe rola) (fara TVA)
€ 30,25
€ 0,06 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
500
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 500 - 900 | € 0,05 | € 5,00 |
| 1000+ | € 0,04 | € 4,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
340 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-323
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.9mm
Detalii produs


