Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Latime
1.4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.01mm
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 12,00
€ 0,06 Buc. (Intr-un pachet de 200) (fara TVA)
€ 14,52
€ 0,073 Buc. (Intr-un pachet de 200) (cu TVA)
Standard
200
€ 12,00
€ 0,06 Buc. (Intr-un pachet de 200) (fara TVA)
€ 14,52
€ 0,073 Buc. (Intr-un pachet de 200) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
200
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 200 - 800 | € 0,06 | € 12,00 |
| 1000 - 1800 | € 0,04 | € 8,00 |
| 2000+ | € 0,04 | € 8,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Latime
1.4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.01mm
Detalii produs


