Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
4.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Power Dissipation
75 W
Frecventa minima de auto-rezonanta
-65 °C
Temperatura maxima de lucru
+150 °C
Lungime
15.75mm
Inaltime
4.82mm
Latime
10.28mm
Dimensiuni
15.75 x 10.28 x 4.82mm
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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€ 1,08
Each (Supplied in a Tube) (fara TVA)
€ 1,285
Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
4.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Power Dissipation
75 W
Frecventa minima de auto-rezonanta
-65 °C
Temperatura maxima de lucru
+150 °C
Lungime
15.75mm
Inaltime
4.82mm
Latime
10.28mm
Dimensiuni
15.75 x 10.28 x 4.82mm
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.