Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
225 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Inaltime
0.94mm
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Lungime
2.9mm
Latime
1.3mm
P.O.A.
Buc. (Intr-un pachet de 25) (fara TVA)
25
P.O.A.
Buc. (Intr-un pachet de 25) (fara TVA)
Informatii despre stoc temporar indisponibile
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
225 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Inaltime
0.94mm
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Lungime
2.9mm
Latime
1.3mm


