Documente tehnice
Specificatii
Marca
NXPChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.3mm
Latime
4.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.4mm
Detalii produs
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
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P.O.A.
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P.O.A.
5
Documente tehnice
Specificatii
Marca
NXPChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.3mm
Latime
4.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.4mm
Detalii produs