Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
5mm
Latime
4.1mm
Transistor Material
Si
Typical Gate Charge @ Vgs
49 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Tara de origine
Philippines
Detalii produs
N-Channel MOSFET, 40V to 55V
MOSFET Transistors, NXP Semiconductors
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Standard
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
5mm
Latime
4.1mm
Transistor Material
Si
Typical Gate Charge @ Vgs
49 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Tara de origine
Philippines
Detalii produs


