Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
67 A
Maximum Drain Source Voltage
30 V
Tip pachet
LFPAK, SOT-669
Montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 5 V
Latime
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Philippines
Detalii produs
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
€ 5,45
€ 1,09 Buc. (Intr-un pachet de 5) (fara TVA)
€ 6,59
€ 1,319 Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 5,45
€ 1,09 Buc. (Intr-un pachet de 5) (fara TVA)
€ 6,59
€ 1,319 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
67 A
Maximum Drain Source Voltage
30 V
Tip pachet
LFPAK, SOT-669
Montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 5 V
Latime
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Philippines
Detalii produs


