Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
30 V
Serie
NX3008NBKW
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Latime
1.35mm
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1mm
Automotive Standard
AEC-Q101
Detalii produs
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
€ 17,00
€ 0,17 Buc. (Intr-un pachet de 100) (fara TVA)
€ 20,23
€ 0,202 Buc. (Intr-un pachet de 100) (cu TVA)
Standard
100
€ 17,00
€ 0,17 Buc. (Intr-un pachet de 100) (fara TVA)
€ 20,23
€ 0,202 Buc. (Intr-un pachet de 100) (cu TVA)
Standard
100
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
100 - 500 | € 0,17 | € 17,00 |
600 - 1400 | € 0,13 | € 13,00 |
1500+ | € 0,11 | € 11,00 |
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
30 V
Serie
NX3008NBKW
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Latime
1.35mm
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1mm
Automotive Standard
AEC-Q101
Detalii produs