Documente tehnice
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
160 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Latime
1.35mm
Number of Elements per Chip
2
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Detalii produs
Dual P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 5,10
€ 0,17 Each (Supplied as a Tape) (fara TVA)
€ 6,07
€ 0,202 Each (Supplied as a Tape) (cu TVA)
Standard
30
€ 5,10
€ 0,17 Each (Supplied as a Tape) (fara TVA)
€ 6,07
€ 0,202 Each (Supplied as a Tape) (cu TVA)
Standard
30
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
160 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Latime
1.35mm
Number of Elements per Chip
2
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Detalii produs