Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
3mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 6,00
€ 0,06 Buc. (Pe o rola de 100) (fara TVA)
€ 7,14
€ 0,071 Buc. (Pe o rola de 100) (cu TVA)
Standard
100
€ 6,00
€ 0,06 Buc. (Pe o rola de 100) (fara TVA)
€ 7,14
€ 0,071 Buc. (Pe o rola de 100) (cu TVA)
Standard
100
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
100 - 100 | € 0,06 | € 6,00 |
200 - 400 | € 0,05 | € 5,00 |
500 - 900 | € 0,04 | € 4,00 |
1000 - 1900 | € 0,03 | € 3,00 |
2000+ | € 0,03 | € 3,00 |
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
3mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs