Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V
Latime
3.7mm
Number of Elements per Chip
1
Lungime
6.7mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.7mm
Frecventa minima de auto-rezonanta
-65 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
5
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V
Latime
3.7mm
Number of Elements per Chip
1
Lungime
6.7mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.7mm
Frecventa minima de auto-rezonanta
-65 °C
Tara de origine
China
Detalii produs


