Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
520 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.35 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
417 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
2.9 nC @ 10 V
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Each (Supplied as a Tape) (fara TVA)
Standard
25
P.O.A.
Each (Supplied as a Tape) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
520 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.35 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
417 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
2.9 nC @ 10 V
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs


