Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,25
Buc. (Livrat pe rola) (fara TVA)
€ 0,298
Buc. (Livrat pe rola) (cu TVA)
25
€ 0,25
Buc. (Livrat pe rola) (fara TVA)
€ 0,298
Buc. (Livrat pe rola) (cu TVA)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
25 - 125 | € 0,25 | € 6,25 |
150 - 725 | € 0,11 | € 2,75 |
750 - 1475 | € 0,10 | € 2,50 |
1500+ | € 0,07 | € 1,75 |
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Tara de origine
China
Detalii produs