Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Number of Elements per Chip
1
Latime
1.4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-65 °C
Inaltime
1mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,06
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,071
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,06
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,071
Buc. (Pe o rola de 3000) (cu TVA)
3000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
3000 - 3000 | € 0,06 | € 180,00 |
6000 - 12000 | € 0,06 | € 180,00 |
15000 - 27000 | € 0,05 | € 150,00 |
30000 - 57000 | € 0,05 | € 150,00 |
60000+ | € 0,05 | € 150,00 |
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Number of Elements per Chip
1
Latime
1.4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-65 °C
Inaltime
1mm
Tara de origine
China
Detalii produs