Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
1mm
Frecventa minima de auto-rezonanta
-65 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 90,00
€ 0,03 Buc. (Pe o rola de 3000) (fara TVA)
€ 107,10
€ 0,036 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 90,00
€ 0,03 Buc. (Pe o rola de 3000) (fara TVA)
€ 107,10
€ 0,036 Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
1mm
Frecventa minima de auto-rezonanta
-65 °C
Tara de origine
China
Detalii produs