N-channel MOSFET,IRF640 18A 200V

Marca

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Tip pachet

TO-220AB

Timp montare

Through Hole

Numar pini

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Temperatura maxima de lucru

+150 °C

Lungime

10.51mm

Temperatura minima de lucru

-55 °C

Typical Gate Charge @ Vgs

70 nC @ 10 V

Inaltime

15.49mm

Latime

4.65mm