Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
1000 V
Serie
Linear
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
5.3mm
Number of Elements per Chip
1
Lungime
16.26mm
Typical Gate Charge @ Vgs
155 nC @ 20 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
21.46mm
Tara de origine
Germany
Detalii produs
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 591,60
€ 19,72 Each (In a Tube of 30) (fara TVA)
€ 715,84
€ 23,861 Each (In a Tube of 30) (cu TVA)
30
€ 591,60
€ 19,72 Each (In a Tube of 30) (fara TVA)
€ 715,84
€ 23,861 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
1000 V
Serie
Linear
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
5.3mm
Number of Elements per Chip
1
Lungime
16.26mm
Typical Gate Charge @ Vgs
155 nC @ 20 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
21.46mm
Tara de origine
Germany
Detalii produs
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS