Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
600 V
Serie
HiperFET, Polar
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
16.26mm
Temperatura maxima de lucru
+150 °C
Latime
5.3mm
Temperatura minima de lucru
-55 °C
Inaltime
21.46mm
Detalii produs
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 10,67
€ 10,67 Buc. (fara TVA)
€ 12,70
€ 12,70 Buc. (cu TVA)
Standard
1
€ 10,67
€ 10,67 Buc. (fara TVA)
€ 12,70
€ 12,70 Buc. (cu TVA)
Standard
1
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
1 - 5 | € 10,67 |
6 - 14 | € 9,12 |
15+ | € 8,59 |
Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
600 V
Serie
HiperFET, Polar
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
16.26mm
Temperatura maxima de lucru
+150 °C
Latime
5.3mm
Temperatura minima de lucru
-55 °C
Inaltime
21.46mm
Detalii produs
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS