Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
170 A
Maximum Drain Source Voltage
100 V
Serie
HiperFET, Polar
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
714 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
198 nC @ 10 V
Latime
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
16.26mm
Temperatura maxima de lucru
+175 °C
Inaltime
21.46mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 60,95
€ 12,19 Each (Supplied in a Tube) (fara TVA)
€ 72,53
€ 14,51 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
€ 60,95
€ 12,19 Each (Supplied in a Tube) (fara TVA)
€ 72,53
€ 14,51 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
5 - 19 | € 12,19 |
20 - 49 | € 11,47 |
50 - 99 | € 8,71 |
100+ | € 8,24 |
Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
170 A
Maximum Drain Source Voltage
100 V
Serie
HiperFET, Polar
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
714 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
198 nC @ 10 V
Latime
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
16.26mm
Temperatura maxima de lucru
+175 °C
Inaltime
21.46mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS