N-Channel MOSFET Transistor, 17 A, 55 V, 4-Pin IPAK International Rectifier IRLU024N

Marca

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

55 V

Tip pachet

TO-251AA

Timp montare

Through Hole

Numar pini

4

Maximum Drain Source Resistance

118 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

15 nC @ 5 V

Number of Elements per Chip

1

Temperatura maxima de lucru

+175 °C

Lungime

6.73mm

Latime

2.39mm

Serie

HEXFET

Frecventa minima de auto-rezonanta

-55 °C

Inaltime

7.49mm