Documente tehnice
Specificatii
Channel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
540 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Serie
HEXFET
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Inaltime
1.02mm
Latime
1.4mm
P.O.A.
1
P.O.A.
1
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Documente tehnice
Specificatii
Channel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
540 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Serie
HEXFET
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Inaltime
1.02mm
Latime
1.4mm