Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Channel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Serie
IRLML2502
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Lungime
3.04mm
Typical Gate Charge @ Vgs
8 nC @ 5 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
1.4mm
Inaltime
1.02mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
€ 42,00
€ 0,21 Buc. (Livrat pe rola) (fara TVA)
€ 50,82
€ 0,254 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
200
€ 42,00
€ 0,21 Buc. (Livrat pe rola) (fara TVA)
€ 50,82
€ 0,254 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
200
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 200 - 480 | € 0,21 | € 4,20 |
| 500 - 980 | € 0,19 | € 3,80 |
| 1000 - 1980 | € 0,12 | € 2,40 |
| 2000+ | € 0,09 | € 1,80 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Channel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Serie
IRLML2502
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Lungime
3.04mm
Typical Gate Charge @ Vgs
8 nC @ 5 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
1.4mm
Inaltime
1.02mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V


