Documente tehnice
Specificatii
Channel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
55 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
17.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
63 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Serie
HEXFET
Temperatura minima de lucru
-55 °C
Inaltime
8.77mm
P.O.A.
1
P.O.A.
1
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Documente tehnice
Specificatii
Channel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
55 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
17.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
63 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Serie
HEXFET
Temperatura minima de lucru
-55 °C
Inaltime
8.77mm