Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Channel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
300 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
59 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
430 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
165 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
15.9mm
Latime
5.3mm
Serie
HEXFET
Frecventa minima de auto-rezonanta
-40 °C
Inaltime
20.3mm
P.O.A.
Standard
1
P.O.A.
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Channel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
300 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
59 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
430 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
165 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
15.9mm
Latime
5.3mm
Serie
HEXFET
Frecventa minima de auto-rezonanta
-40 °C
Inaltime
20.3mm


