Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Channel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO-8
Serie
IRF7424PbF
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Lungime
5mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
4mm
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
€ 11,90
€ 1,19 Buc. (Intr-un pachet de 10) (fara TVA)
€ 14,40
€ 1,44 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 11,90
€ 1,19 Buc. (Intr-un pachet de 10) (fara TVA)
€ 14,40
€ 1,44 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 10 - 40 | € 1,19 | € 11,90 |
| 50 - 90 | € 1,12 | € 11,20 |
| 100 - 240 | € 1,07 | € 10,70 |
| 250 - 490 | € 1,01 | € 10,10 |
| 500+ | € 0,93 | € 9,30 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Channel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO-8
Serie
IRF7424PbF
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Lungime
5mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
4mm
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V


