N-Channel MOSFET Transistor, 110 A, 55 V, 3-Pin TO-220AB International Rectifier IRF3205PBF

Marca

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

55 V

Tip pachet

TO-220AB

Timp montare

Through Hole

Numar pini

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

146 nC @ 10 V

Number of Elements per Chip

1

Temperatura maxima de lucru

+175 °C

Lungime

10.54mm

Latime

4.69mm

Transistor Material

Si

Serie

HEXFET

Temperatura minima de lucru

-55 °C

Inaltime

8.77mm